spsemi rev 2017 03 02 ... www.spsemi.cn page 1 of 4 electro-static discharge TUSD05T8U low capacitance esd array for high speed data ultra features with tvs diode esd protection:level 4 flow through 150 watts peak pulse power per line(tp=8/20us) ultra low capacitance:0.3pf max.(any i/o to i/o .) protection 4 pair(8 lines) i/o port esd/TUSD05T8U iec compatibility en61000 - 4 iec61000-4-2(esd):level 4,contact:>12kv,air:>15kv iec61000-4-4 (eft) 40a (5/50s) iec61000-4-5 (surge) 5a (8/20s) mechanical characteristics molded dfn3810-9l package packing: tape and reel flammability rating ul 94v -0 quantity per reel : 3,000pcs reel size : 7 inch halogen free applications usb type c wireless system hdmi 1.3,1.4 and 2.0 high speed data line display port notebook computers dfn3180-9l pin configuration 1 234 5 6 7 8 9
spsemi www.spsemi.cn page 2 of 4 maximum ratings (t =25 unless otherwise specified ) a ratings and characteristic curves fig.1 non-repetitive peak pulse power v.s pulse time 0 100 10 0.01 pulse duration-tp( ) s fig.2 pulse waveform 0.1 1 peak pulse power-p (kw) pp 5 010 30 15 0 10 time( ) s 20 25 20 30 40 50 60 70 80 90 100 110 percent of i pp t=i /2 d pp waveform parameters: tr=8s t =20s d e -1 parameter symbol value units peak pulse power(tp=8/20s) operating temperature range storage temperature range peak pulse current(tp=8/20s) p pp t j t stg pp i 150 -55~150 -55~150 5 watts a electrical characteristics (t =25 unless otherwise specified ) a parameter symbol conditions units min. typ. max. TUSD05T8U(marking:8005) reverse stand-off voltage reverse breakdown voltage reverse leakage current clamping voltage junction capacitance junction capacitance v rwm v br r i c v i/o c i/o-i/o c 5 8.5 0.9 10 i/o to gnd i =1ma,i/o to gnd z v =5v,i/o to gnd r i =1a,tp=8/20s,i/o to gnd pp 0vdc,f=1mhz 6.1 v v a v f p f p 0vdc,f=1mhz pin capacitance to gnd 0.5 0.3 esd/TUSD05T8U rev 2017 03 02 ...
spsemi www.spsemi.cn page 3 of 4 ratings and characteristic curves fig.4 normalized capacitance vs.reverse voltage 1 0 2 3 0 0.1 reverse voltage-v ( ) r v 4 5 capacitance-c (pf) j fig.3 power derating curve 0 25 ambient temperature-t ( ) a 75 0 % of rated power 100 150 50 125 20 40 60 80 100 120 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 fig.6 breakdown voltage v map i/o pin to gnd b 6 6.2 breakdown votage-v (v) b fig.5 forward voltage v map f sample size 0.6 forward voltage -v (v)@i =1ma ff 0.61 0.62 6.4 6.6 6.8 7 7.2 7.4 7.6 7.8 8 sample size 0.63 0.64 0.65 0.66 0.67 0.68 0.69 0.7 esd/TUSD05T8U fig.7 clamping voltage v map i/o pin to gnd c clamping voltage-v (v) c peak pulse current -i (a) pp 8 6 10 12 14 16 0 1 2 3 4 5 6 7 8 rev 2017 03 02 ...
application type-c protection spsemi www.spsemi.cn page 4 of 4 dimensions(dfn3810-9l) dfn3810-9l d e millimeters inches dim a a1 b d e e1 e l min 0.475 0.00 0.15 3.7 0.9 0.25 max 0.525 0.05 0.25 3.9 1.1 0.35 min 0.019 0.000 0.006 0.146 0.035 0.010 max 0.021 0.002 0.010 0.154 0.043 0.014 0.9bsc 0.8bsc esd/TUSD05T8U a a1 b e/2 e e1 d/2 1 2 l 0.035bsc 0.032bsc recommended mounting pad layout 0.6 0.024 1.45 0.057 0.35 0.014 0.9 0.035 0.95 0.037 0.9 0.035 0.8 0.032 0.4 0.016 0.8 0.032 0.2 0.008 dimensions in ( ) millimeters inches 1 2 3 4 5 6 7 8 9 rx1+ rx1- sbu2 d- d+ cc2 tx2+ tx2 sbu2 d- rx1+ rx1- v bus v bus tx2+ tx2 d+ cc2 gnd gnd TUSD05T8U usb controller type c connector rev 2017 03 02 ...
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